US Patent Issued to NUVOTON TECHNOLOGY CORPORATION JAPAN on Feb. 11 for "High frequency power amplification device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,723, issued on Feb. 11, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).

"High frequency power amplification device" was invented by Kazuhiko Ohhashi (Osaka, Japan) and Masatoshi Kamitani (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A radio-frequency power amplifier device includes: a carrier amplifier semiconductor device and a peak amplifier semiconductor device on a multilayer submount substrate; a bias power supply semiconductor device; second radio-frequency signal wiring that transmits radio-frequency signal to the carrier amplifier semiconductor device and the peak amplifier semiconductor device; and carrie...