US Patent Issued to NUVOTON TECHNOLOGY CORPORATION JAPAN on April 15 for "Power amplifier semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,601, issued on April 15, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).

"Power amplifier semiconductor device" was invented by Akihiko Nishio (Ishikawa, Japan), Katsuhiko Kawashima (Hyogo, Japan), Yusuke Kanda (Toyama, Japan) and Takashi Yui (Shiga, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power amplifier semiconductor device includes: a substrate; a semiconductor layer provided on the surface of the substrate and including a plurality of unit HEMTs; a connection layer provided on the semiconductor layer and including a source electrode, a drain electrode, and a gate electrode of each of the plurality of unit HEMTs...