ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,392,052, issued on Aug. 19, was assigned to NuFlare Technology Inc. (Kanagawa, Japan).
"Film deposition method" was invented by Yoshikazu Moriyama (Shizuoka, Japan), Yoshiaki Daigo (Tokyo), Toru Watanabe (Kanagawa, Japan) and Shigeaki Ishii (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A film deposition method according to an embodiment includes rotating a wafer mounted on a susceptor in a reaction chamber. Next, a temperature of the wafer is controlled such that, when changing a rotational speed of the wafer before and after a film deposition step of introducing a process gas into the reaction chamber and epitaxially growing a SiC fil...