ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,363, issued on June 3, was assigned to NORTHWESTERN UNIVERSITY (Evanston, Ill.).
"Method for fabricating a memtransistor" was invented by Vinod K. Sangwan (Evanston, Ill.), Hong-Sub Lee (Evanston, Ill.) and Mark C. Hersam (Wilmette, Ill.).
According to the abstract* released by the U.S. Patent & Trademark Office: "One aspect of the invention relates to a method for fabricating a memtransistor comprising growing a polycrystalline monolayer film on a substrate, wherein the polycrystalline monolayer film contains grains defining a plurality of grain boundaries thereof; and forming an electrode array on the grown polycrystalline monolayer film, wherein the electrode array has a plural...