US Patent Issued to NORTH CAROLINA STATE UNIVERSITY on Aug. 19 for "Indium gallium nitride (InGaN) relaxed templates employed as a substrate for nitride-based devices and related methods" (North Carolina Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,295, issued on Aug. 19, was assigned to NORTH CAROLINA STATE UNIVERSITY (Raleigh, N.C.).

"Indium gallium nitride (InGaN) relaxed templates employed as a substrate for nitride-based devices and related methods" was invented by Salah M. Bedair (Raleigh, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various examples are provided related to InGaN-relaxed templates. In one example, a device structure includes a GaN layer; and a semibulk template comprising a plurality of stacked periods on the GaN layer. Each period can include a layer of InGaN and a GaN interlayer disposed on the layer of InGaN, where a thickness of the GaN interlayer of a top per...