US Patent Issued to NO.24 RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP on Oct. 21 for "MOS device with resistive field plate for realizing conductance modulation field effect and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,157, issued on Oct. 21, was assigned to NO.24 RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP Corp. (Chongqing, China).

"MOS device with resistive field plate for realizing conductance modulation field effect and preparation method thereof" was invented by Kaizhou Tan (Chongqing, China), Tian Xiao (Chongqing, China), Jiahao Zhang (Chongqing, China), Yonghui Yang (Chongqing, China), Xiaoquan Li (Chongqing, China), Pengfei Wang (Chongqing, China), Ying Pei (Chongqing, China), Guangbo Li (Chongqing, China), Hequan Jiang (Chongqing, China), Peijian Zhang (Chongqing, China), Sheng Qiu (Chongqing, China), Liang Chen (Chongqing, China) and Wei Cui (Chongqing, China).

According ...