ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,092, issued on April 15, was assigned to NISSIN ELECTRIC Co. Ltd. (Kyoto, Japan).
"Plasma treatment device" was invented by Toshihiko Sakai (Kyoto, Japan), Daisuke Azuma (Kyoto, Japan), Seiji Nakata (Kyoto, Japan) and Yasunori Ando (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention realizes a plasma treatment device with which a film deposition rate and film thickness of a film formed on a substrate can be made uniform. A plasma treatment device includes: a plurality of antennas for plasma generation arranged in a vacuum chamber; and a plurality of groups of multiple gas injection ports arranged in the vicinity of line...