US Patent Issued to NISSAN MOTOR, Renault on June 10 for "Semiconductor device, power module and manufacturing method for the semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,884, issued on June 10, was assigned to NISSAN MOTOR Co. LTD. (Yokohama, Japan) and Renault SAS (Boulogne-Billancourt, France).

"Semiconductor device, power module and manufacturing method for the semiconductor device" was invented by Toshiharu Marui (Kanagawa, Japan), Tetsuya Hayashi (Kanagawa, Japan), Keiichiro Numakura (Kanagawa, Japan), Wei Ni (Kanagawa, Japan) and Ryota Tanaka (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is ...