ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,449,732, issued on Oct. 21, was assigned to NISSAN CHEMICAL Corp. (Tokyo).
"Composition for forming resist underlayer film with improved film density" was invented by Hikaru Tokunaga (Toyama, Japan), Masashi Ohno (Funabashi, Japan), Rikimaru Sakamoto (Toyama, Japan) and Keisuke Hashimoto (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structur...