ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,545,863, issued on Feb. 10, was assigned to NISSAN CHEMICAL Corp. (Tokyo).

"Method for cleaning semiconductor substrate, method for producing processed semiconductor substrate, and stripping composition" was invented by Takahisa Okuno (Toyama, Japan), Masaki Yanai (Toyama, Japan), Takuya Fukuda (Toyama, Japan), Hiroto Ogata (Toyama, Japan), Shunsuke Moriya (Toyama, Japan), Hiroshi Ogino (Toyama, Japan) and Tetsuya Shinjo (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover comp...