ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,386,262, issued on Aug. 12, was assigned to NISSAN CHEMICAL Corp. (Tokyo).

"Resist underlayer film-forming composition using carbon-oxygen double bond" was invented by Hikaru Tokunaga (Toyama, Japan), Hiroto Ogata (Toyama, Japan), Keisuke Hashimoto (Toyama, Japan) and Makoto Nakajima (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed....