US Patent Issued to Nippon Telegraph and Telephone on April 29 for "Method for producing nitride semiconductor photoelectrode" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,286,718, issued on April 29, was assigned to Nippon Telegraph and Telephone Corp. (Tokyo).

"Method for producing nitride semiconductor photoelectrode" was invented by Yuya Uzumaki (Musashino, Japan), Sayumi Sato (Musashino, Japan), Yoko Ono (Musashino, Japan) and Takeshi Komatsu (Musashino, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for producing a nitride semiconductor photoelectrode capable of improving the light energy conversion efficiency. The method for producing a nitride semiconductor photoelectrode includes a first step of forming an n-type gallium nitride layer on an insulating or conductive substrate, a second st...