ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,737, issued on Oct. 14, was assigned to Ningde Amperex Technology Ltd. (Ningde, China).
"Anode material, electrochemical device and electronic device comprising the same" was invented by Daoyi Jiang (Ningde, China), Zhihuan Chen (Ningde, China), Hang Cui (Ningde, China) and Yuansen Xie (Ningde, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "An anode material includes a silicon composite substrate. In the X-ray diffraction pattern of the anode material, the highest intensity at 2Theta within the range of 28.0deg to 29.0deg is I2, and the highest intensity at 2Theta within the range of 20.5deg to 21.5deg is I1, wherein 0greater thanI2/I1less tha...