ALEXANDRIA, Va., June 16 -- United States Patent no. 12,306,271, issued on May 20, was assigned to NINGBO CRRC TIMES TRANSDUCER TECHNOLOGY Co. LTD. (Ningbo, China).
"Manufacturing method for fluxgate chip" was invented by Xiaowei Hou (Ningbo, China), Yang Lv (Ningbo, China), Liangguang Zheng (Ningbo, China), Juping Li (Ningbo, China), Po Zhang (Ningbo, China) and Peng Wu (Ningbo, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other...