US Patent Issued to NIKKISO on Sept. 16 for "Nitride semiconductor ultraviolet light-emitting element and production method therefor" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,139, issued on Sept. 16, was assigned to NIKKISO Co. LTD. (Tokyo).

"Nitride semiconductor ultraviolet light-emitting element and production method therefor" was invented by Akira Hirano (Aichi, Japan) and Yosuke Nagasawa (Nara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers inc...