US Patent Issued to NIKKISO on Sept. 16 for "Nitride semiconductor ultraviolet light emitting element" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,142, issued on Sept. 16, was assigned to NIKKISO Co. LTD. (Tokyo).

"Nitride semiconductor ultraviolet light emitting element" was invented by Akira Hirano (Aichi, Japan) and Yosuke Nagasawa (Nara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element with n-type, active, and p-type layers stacked vertically and made of AlGaN-based wurtzite structured semiconductors. The active layer has a quantum-well structure and each layer is epitaxially grown having a surface on which multi-step terraces parallel to the (0001) plane are formed. T...