ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,357, issued on Oct. 14, was assigned to Nikkiso Co. Ltd. (Tokyo).
"Method for manufacturing nitride semiconductor light-emitting element" was invented by Miho Matsuzaki (Hakusan, Japan), Yusuke Matsukura (Hakusan, Japan) and Cyril Pernot (Hakusan, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a nitride semiconductor light-emitting element includes growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70%, and growing a p-type contact layer with an Al composition ratio of not more than 10%. A flow rate ratio Fp/FIII is a p/III ratio and a flow rate ratio FV/FII...