US Patent Issued to Nikkiso on Nov. 25 for "Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,342, issued on Nov. 25, was assigned to Nikkiso Co. Ltd. (Tokyo).

"Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element" was invented by Kazufumi Takao (Ishikawa, Japan) and Yusuke Matsukura (Ishikawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor light-emitting element includes a substrate, a buffer layer formed on the substrate, an n-type semiconductor layer formed on the buffer layer, and an active layer being formed on the n-type semiconductor layer and comprising a single quantum well structure. A full width at half maximum of an X-ray rocking curve...