ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,762, issued on May 13, was assigned to NIKKISO Co. LTD. (Tokyo).

"Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element" was invented by Mitsugu Wada (Hakusan, Japan) and Shinya Fukahori (Hakusan, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an Al...