US Patent Issued to NIKKISO on March 4 for "Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element" (Japanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,965, issued on March 4, was assigned to NIKKISO Co. LTD. (Tokyo).

"Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element" was invented by Tetsuhiko Inazu (Hakusan Ishikawa, Japan) and Noritaka Niwa (Hakusan Ishikawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; and a p-side contact electrode that i...