US Patent Issued to NIKKISO on June 10 for "Nitride semiconductor ultraviolet light-emitting element and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,974, issued on June 10, was assigned to NIKKISO Co. LTD. (Tokyo).

"Nitride semiconductor ultraviolet light-emitting element and manufacturing method thereof" was invented by Akira Hirano (Aichi, Japan) and Yosuke Nagasawa (Nara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers inc...