US Patent Issued to NIKKISO on July 15 for "Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,068, issued on July 15, was assigned to NIKKISO Co. LTD. (Tokyo).

"Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element" was invented by Noritaka Niwa (Ishikawa, Japan), Tetsuhiko Inazu (Ishikawa, Japan) and Haruhisa Aida (Ishikawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a p-side contact ele...