ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,716, issued on Aug. 12, was assigned to Nikkiso Co. Ltd. (Tokyo).
"Nitride semiconductor light-emitting element" was invented by Yusuke Matsukura (Ishikawa, Japan) and Cyril Pernot (Ishikawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on...