US Patent Issued to NIKKISO on April 15 for "Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element" (Japanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,312, issued on April 15, was assigned to NIKKISO Co. LTD. (Tokyo).

"Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element" was invented by Noritaka Niwa (Hakusan, Japan) and Tetsuhiko Inazu (Hakusan, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light-emitting element includes: an n-type semiconductor layer; an active layer; a p-side contact electrode made of Rh; a p-side electrode covering layer made of Ti or TiN that covers the p-side contact electrode; a first protective layer made of SiO2 or SiON that covers an upper surface and a side surface of the p-side electrode covering ...