US Patent Issued to NICHIA on Jan. 13 for "Nitride semiconductor light emitting element" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,122, issued on Jan. 13, was assigned to NICHIA Corp. (Anan, Japan).

"Nitride semiconductor light emitting element" was invented by Hiroki Abe (Komatsushima, Japan), Tomoya Yamashita (Anan, Japan) and Kenji Uchida (Anan, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor light emitting element includes: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and an active layer disposed between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer and comprising a plurality of stacks, each comprising a well layer and a barrier layer. The well layers include, successively from ...