ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,140, issued on Jan. 13, was assigned to NICHIA Corp. (Anan, Japan).
"Method of manufacturing light emitting element" was invented by Seiichi Hayashi (Anan, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a light emitting element includes: forming a first n-type semiconductor layer containing an n-type impurity; forming, on the first n-type semiconductor layer, a first superlattice layer, which is grown at a first growth temperature; forming, on the first superlattice layer, a first light emitting layer; forming, on the first light emitting layer, a first p-type semiconductor layer containing a p-type impurity; forming,...