US Patent Issued to NICHIA on Jan. 13 for "Light-emitting element including p-side semiconductor layer having first, second, and third layers" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,126, issued on Jan. 13, was assigned to NICHIA Corp. (Anan, Japan).

"Light-emitting element including p-side semiconductor layer having first, second, and third layers" was invented by Tatsuo Shirahama (Anan, Japan), Naoya Iwai (Anan, Japan), Shingo Kanehira (Anan, Japan) and Takanori Fukumori (Tokushima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting element includes: a semiconductor structure including: an n-side semiconductor layer including an n-type nitride semiconductor layer; a p-side semiconductor layer including a p-type nitride semiconductor layer; and an active layer disposed between the n-side semiconductor layer a...