US Patent Issued to NICHIA on Aug. 12 for "Semiconductor light emitting element and method of manufacturing semiconductor light emitting element" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,717, issued on Aug. 12, was assigned to NICHIA Corp. (Anan, Japan).

"Semiconductor light emitting element and method of manufacturing semiconductor light emitting element" was invented by Shunsuke Minato (Anan, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light emitting element includes: a first light emitting part comprising: a first n-side nitride semiconductor layer; a first active layer located on the first n-side nitride semiconductor layer; and a first p-side nitride semiconductor layer located on the first active layer; and a second n-side nitride semiconductor layer. A bonding face of the first light emitting part and...