US Patent Issued to NGK INSULATORS on Sept. 30 for "SiC composite substrate and composite substrate for semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,440, issued on Sept. 30, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"SiC composite substrate and composite substrate for semiconductor device" was invented by Kiyoshi Matsushima (Nagoya, Japan), Jun Yoshikawa (Nagoya, Japan), Morimichi Watanabe (Nagoya, Japan) and Risa Miyakaze (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. Pores are present in the SiC composite substrate."

The ...