US Patent Issued to NGK INSULATORS on Sept. 23 for "Rare earth-containing SiC substrate and method for producing SiC epitaxial layer" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,440, issued on Sept. 23, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"Rare earth-containing SiC substrate and method for producing SiC epitaxial layer" was invented by Kiyoshi Matsushima (Nagoya, Japan), Morimichi Watanabe (Nagoya, Japan) and Jun Yoshikawa (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1x1016 atoms/cm3 to 1x1019 atoms/cm3 inclusive and a concentration of Al is from 1x1016 atoms/cm3 to 1x1021 atoms/cm3 inclusive."

The patent was filed on June 3, 2022, under Application No. 17/805,234....