ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,845, issued on Sept. 2, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).
"Alpha-Ga 2 O 3 semiconductor film" was invented by Hiroshi Fukui (Obu, Japan), Morimichi Watanabe (Nagoya, Japan) and Jun Yoshikawa (Nagoya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An Alpha-Ga2O3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is de...