ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,415,728, issued on Sept. 16, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).
"Aluminum nitride plate" was invented by Yoshimasa Kobayashi (Nagoya, Japan) and Hiroharu Kobayashi (Kasugai-Shi, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An aluminum nitride plate satisfies both of a "relation 1: c1less than97.5%" and a "relation 2: c2/c1greater than0.995" where c1 is a c-plane degree of orientation that is defined as a ratio of a diffraction intensity of (002) plane to a sum of the diffraction intensity of (002) plane and a diffraction intensity of (100) plane when the surface layer of the aluminum nitride plate is subjected to an X-ra...