ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,226, issued on Nov. 25, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).
"AlN single crystal substrate" was invented by Hirohisa Ogawa (Kitanagoya, Japan), Morimichi Watanabe (Nagoya, Japan) and Hiroharu Kobayashi (Kasugai, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided an AlN single-crystal substrate of a circular shape with a radius r, wherein when the AlN single-crystal substrate is sectioned into three regions, the three regions being a central section, which is a region radially extending from a center of the AlN single-crystal substrate to 0.4r, a middle section, which is a region excluding the central section from ...