ALEXANDRIA, Va., July 9 -- United States Patent no. 12,351,941, issued on July 8, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).
"Ground substrate and method for producing same" was invented by Morimichi Watanabe (Nagoya, Japan) and Jun Yoshikawa (Nagoya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. A front surface of the orientation layer on a side used for crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. The orientation layer contains a solid solution containi...