US Patent Issued to Nexperia on June 24 for "Trench MOSFET" (Dutch Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,569, issued on June 24, was assigned to Nexperia B.V. (Nijmegen, Netherlands).

"Trench MOSFET" was invented by Steven Peake (Nijmegen, Netherlands) and Phil Rutter (Nijmegen, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a trench metal-oxide-semiconductor field-effect transistor, trench MOSFET, and to a method for manufacturing such transistors. In particular, the present disclosure relates to trench MOSFETs having deep trenches adjacent to the more shallow gate defining trench for obtaining a RESURF effect. According to the present disclosure, an ion implantation region of a charge type similar to that...