US Patent Issued to Nexperia on Feb. 10 for "Trench gate metal oxide semiconductor field effect transistor and method of manufacture" (Dutch Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,456, issued on Feb. 10, was assigned to Nexperia B.V. (Nijmegen, Netherlands).

"Trench gate metal oxide semiconductor field effect transistor and method of manufacture" was invented by Pei Heng Hung (Nijmegen, Netherlands), Steffen Holland (Nijmegen, Netherlands), Chinmoy Khaund (Nijmegen, Netherlands) and Manoj Kumar (Nijmegen, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MOSFET is provided, including a semiconductor body having a first major surface, a trench extending into the body from the first major surface to a gate region, the body including: a source region of a first conductivity type adjacent a sidewall of the trench at th...