US Patent Issued to Newport Fab on May 6 for "Asymmetric halo-implant body-source-tied semiconductor-on-insulator (SOI) device" (American, Japanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,155, issued on May 6, was assigned to Newport Fab LLC (Newport Beach, Calif.).

"Asymmetric halo-implant body-source-tied semiconductor-on-insulator (SOI) device" was invented by Allan K. Calvo (Tustin, Calif.) and Kamei Masayuki (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor-on-insulator (SOI) device includes a semiconductor layer situated over a buried oxide layer, the buried oxide layer being situated over a substrate. An SOI transistor is situated in the semiconductor layer and includes a transistor body, gate fingers, source regions, and drain regions. The transistor body has a first conductivity type. The source r...