US Patent Issued to Newport Fab on July 29 for "Stress-reduced silicon photonics semiconductor wafer" (Oregon, New Hampshire, California Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,630, issued on July 29, was assigned to Newport Fab LLC (Newport Beach, Calif.).

"Stress-reduced silicon photonics semiconductor wafer" was invented by Oleg Martynov (Lebanon, N.H.), Edward Preisler (San Clemente, Calif.) and William Krieger (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stress-reduced silicon photonics semiconductor wafer includes a silicon nitride layer on a backside of the wafer. At least one silicon nitride stress-reduction configuration is on a topside of the wafer. At least one silicon nitride photonics device is also on the topside of the wafer. A silicon photonics device can be situated in the wafer."

The ...