US Patent Issued to Newport Fab on July 1 for "Method for forming a semiconductor structure having a porous semiconductor layer in RF devices" (California Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,673, issued on July 1, was assigned to Newport Fab LLC (Newport Beach, Calif.).

"Method for forming a semiconductor structure having a porous semiconductor layer in RF devices" was invented by Paul D. Hurwitz (Irvine, Calif.), Edward Preisler (San Clemente, Calif.), David J. Howard (Irvine, Calif.) and Marco Racanelli (Santa Ana, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate having a first dielectric constant, a porous semiconductor layer situated over the substrate, and a crystalline epitaxial layer situated over the porous semiconductor layer. A first semiconductor device is situated in the cry...