ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,808, issued on Feb. 4, was assigned to NEO Semiconductor Inc. (San Jose, Calif.).
"Methods and apparatus for NAND flash memory" was invented by Fu-Chang Hsu (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatus for NAND flash memory are disclosed. In an embodiment, a method is provided for programming a memory device having a plurality of memory chips that comprise multiple-level-cells. The method includes loading first data in a first chip, programming the first data into selected cells of the first chip using a single-level-cell (SLC) programming mode, and reprogramming the first data stored in the selected cells of...