US Patent Issued to ND-HI TECHNOLOGIES LAB, ETRON TECHNOLOGY on Nov. 11 for "High bandwidth memory stack with side edge interconnection and 3D IC structure with the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,836, issued on Nov. 11, was assigned to ND-HI TECHNOLOGIES LAB INC. and ETRON TECHNOLOGY INC. (Hsinchu, Taiwan).

"High bandwidth memory stack with side edge interconnection and 3D IC structure with the same" was invented by Ho-Ming Tong (Taipei, Taiwan) and Chao-Chun Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC structure includes a memory stack including semiconductor dies horizontally separate with each other, wherein each semiconductor die has a top surface, a bottom surface, four sidewalls, and a plurality of edge pads arranged along a sidewall. The IC structure further includes a memory controller under the first memo...