ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,837, issued on June 24, was assigned to NCKU Research and Development Foundation (Tainan, Taiwan) and Himax Technologies Ltd. (Tainan, Taiwan).
"Recognition system and SRAM cell thereof" was invented by Wei-Li He (Tainan, Taiwan) and Soon-Jyh Chang (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A static random-access memory (SRAM) cell includes a first inverter and a second inverter being cross-coupled; a first access transistor that accesses an output of the first inverter under control of a word line; a second access transistor that accesses an output of the second inverter under control of the word line; a first passage transistor...