US Patent Issued to Navitas Semiconductor on Oct. 7 for "Two-dimensional electron gas charge density control" (California Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,628, issued on Oct. 7, was assigned to Navitas Semiconductor Ltd. (Dublin).

"Two-dimensional electron gas charge density control" was invented by Pil Sung Park (Redondo Beach, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures and related techniques for control of two-dimensional electron gas (2DEG) charge density in gallium nitride (GaN) devices are disclosed. In one aspect, a GaN device includes a compound semiconductor substrate, a source region formed in the compound semiconductor substrate, a drain region formed in the compound semiconductor substrate and separated from the source region, a 2DEG layer formed in the compound semicon...