US Patent Issued to Navitas Semiconductor on Oct. 7 for "Monolithic high side gallium nitride device with integrated capacitive level shifter circuits" (California, Texas Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,682, issued on Oct. 7, was assigned to Navitas Semiconductor Ltd. (Dublin).

"Monolithic high side gallium nitride device with integrated capacitive level shifter circuits" was invented by Marco Giandalia (Marina Del Rey, Calif.), Santosh Sharma (Austin, Texas), Jung Hee Lee (Rolling Hills Estates, Calif.) and Daniel M. Kinzer (El Segundo, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Monolithic high side GaN-based circuits using capacitors for level shifting. In one aspect, a power converter includes a GaN-based die, a switch formed on the GaN-based die and having a gate terminal, where the switch is arranged to be selectively conductive acco...