US Patent Issued to Navitas Semiconductor on March 4 for "Systems and methods for reducing effects of leakage inductance in flyback DC-DC converters" (American, Chinese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,244,225, issued on March 4, was assigned to Navitas Semiconductor Ltd. (Dublin).

"Systems and methods for reducing effects of leakage inductance in flyback DC-DC converters" was invented by Xiucheng Huang (Torrance, Calif.), Bin Li (Pleasanton, Calif.), Weijing Du (Torrance, Calif.) and Yun Zhou (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flyback DC-DC converter. The converter having a transformer with a primary and a secondary windings, first and second switches, a capacitor coupled between the second switch and the primary winding, where the second switch is arranged to operate such that a sum of a first and second time periods e...