US Patent Issued to Navitas Semiconductor on March 25 for "Integrated gallium nitride power device with protection circuits" (California Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,519, issued on March 25, was assigned to Navitas Semiconductor Ltd. (Dublin).

"Integrated gallium nitride power device with protection circuits" was invented by Marco Giandalia (Marina Del Ray, Calif.), Jason Zhang (Monterey Park, Calif.), Hongwei Jia (Aliso Viejo, Calif.) and Daniel M. Kinzer (El Segundo, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal con...