ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,983, issued on Sept. 30, was assigned to National Yang Ming Chiao Tung University (Hsinchu, Taiwan).
"Thin-film transistor device" was invented by Po-Tsun Liu (Hsinchu, Taiwan), Zhen-Hao Li (Tainan, Taiwan), Tsung-Che Chiang (Taoyuan, Taiwan) and Po-Yi Kuo (Hengchun Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A thin-film transistor includes a substrate, a first thin-film structure, a gate structure, and a second thin-film structure that are sequentially disposed on one another. The first thin-film structure includes a channel layer, and first source and drain layers disposed at opposite sides of the channel layer. The gate struc...