US Patent Issued to NATIONAL YANG MING CHIAO TUNG UNIVERSITY on Nov. 4 for "Method for reducing parasitic junction field effect transistor resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,039, issued on Nov. 4, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu, Taiwan).

"Method for reducing parasitic junction field effect transistor resistance" was invented by Bing-Yue Tsui (Hsinchu, Taiwan) and Jui-Cheng Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for reducing parasitic junction field effect transistor resistance, applicable to a high power device having a semiconductor substrate layer, is provided, including providing a plurality of hard masks on a top surface of the semiconductor substrate layer. Each hard mask has a bottom plane and a tilt sidewall such that an acute angle is forme...