ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,891, issued on March 25, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu, Taiwan).
"MFMFET, MFMFET array, and the operating method thereof" was invented by Tuo-Hung Hou (Hsinchu, Taiwan) and Ming-Hung Wu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A metallic ferroelectric metal (MFM) field effect transistor (FET) is provided that includes an MFM, a first FET and a second FET. The MFM has a first electrode. The first FET is electrically connected to the first electrode, and has a first gate electrode, wherein the first gate electrode has a first area. The second FET is electrically connected to the first electro...