US Patent Issued to NATIONAL YANG MING CHIAO TUNG UNIVERSITY on March 18 for "Source-body self-aligned method of a vertical double diffused metal oxide semiconductor field effect transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,559, issued on March 18, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu, Taiwan).

"Source-body self-aligned method of a vertical double diffused metal oxide semiconductor field effect transistor" was invented by Bing-Yue Tsui (Hsinchu, Taiwan) and Jui-Cheng Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A source-body self-aligned method of a VDMOSFET is provided. A pad layer and an unoxidized material layer are sequentially formed on an epitaxial layer on a semiconductor substrate. A lithography process is then carried out for patterning. Later, a thermal oxidation process is employed such that the unoxidize...